Atomic and electronic structure of the nonpolarGaN(11¯00)surface-Reference-Cited by-同舟云学术

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Atomic and electronic structure of the nonpolarGaN(11¯00)surface

Published:2009-09-25 Issue:11 Volume:80 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bertelli M.,Löptien P.,Wenderoth M.,Rizzi A.,Ulbrich R. G.,Righi M. C.,Ferretti A.,Martin-Samos L.,Bertoni C. M.,Catellani A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.115324/fulltext

Reference29 articles.

1. Current Status of GaN-Based Solid-State Lighting

2. Spontaneous polarization and piezoelectric constants of III-V nitrides

3. Characteristics of long wavelength InGaN quantum well laser diodes

4. GaInN∕GaN growth optimization for high-power green light-emitting diodes

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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