Identification of a nitrogen vacancy in GaN by scanning probe microscopy
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.115309/fulltext
Reference53 articles.
1. GaN: Processing, defects, and devices
2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
3. High Voltage Vertical GaN p-n Diodes With Avalanche Capability
4. Luminescence properties of defects in GaN
5. Defect identification in semiconductors with positron annihilation: Experiment and theory
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