Microscopic calculation of electric field effects in GaAs/AlxGa1−xAs/GaAs tunnel structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.12416/fulltext
Reference17 articles.
1. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
2. Electroluminescence from a short asymmetric GaAs/AlAs superlattice
3. The electric field induced photoluminescence properties of GaAs/AlxGa1−xAs quantum‐well structures grown by molecular‐beam epitaxy
4. Longitudinal electric field effects on GaAs‐AlAs type‐II superlattices
5. Observation of resonant tunneling through GaAs quantum well states confined by AlAsX‐point barriers
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