Electroluminescence from a short asymmetric GaAs/AlAs superlattice-Reference-Cited by-同舟云学术

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Electroluminescence from a short asymmetric GaAs/AlAs superlattice

Published:1987-12-01 Issue:12 Volume:2 Page:828-831
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Phillips R T,Couch N R,Kelly M J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers

2. Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE

3. Tunneling through indirect-gap semiconductor barriers

4. Calculation of carrier transport in pseudo-quaternary alloys

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum hydrodynamical approach to scattering in multilayer systems;Physics Letters A;1992-01

2. Indirect tunneling in a short GaAs-AlAs superlattice detected by photoluminescence under hydrostatic pressure;Physical Review B;1990-02-15

3. High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs;Semiconductor Science and Technology;1989-09-01

4. Physics of microstructures;Canadian Journal of Physics;1989-04-01

5. Novel Tunnelling Phenomena in Quantum Wells and Superlattices;Physica Scripta;1989-01-01

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