Calculation of carrier transport in pseudo-quaternary alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference3 articles.
1. Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes
2. Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures
3. A numerical analysis of a heterostructure InP/InGaAs photodiode
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1. Quantum hole transport at the heterointerface of long wavelength avalanche photodiodes;IEEE Journal of Quantum Electronics;1992
2. Electronic States in Semiconductor Heterostructures;Semiconductor Heterostructures and Nanostructures;1991
3. Assisted relaxation and vertical transport of electrons, holes and excitons in semiconductor heterostructures;Journal of Luminescence;1989-12
4. Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures;Physical Review B;1989-07-15
5. Optical evidences of assisted tunneling in a biased double quantum well structure;Applied Physics Letters;1989-05-22
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