Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures-Reference-Cited by-同舟云学术

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Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures

Published:1984-11-05 Issue:19 Volume:53 Page:1841-1844
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ryan J. F.,Taylor R. A.,Turberfield A. J.,Maciel Angela,Worlock J. M.,Gossard A. C.,Wiegmann W.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.53.1841/fulltext

Reference18 articles.

1. Optical characterization of interface disorder in multi-quantum well structures

2. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

3. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

4. Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As

5. The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors

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