The electric field induced photoluminescence properties of GaAs/AlxGa1−xAs quantum‐well structures grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339793
Reference13 articles.
1. Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
2. Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
3. Effect of an electric field on the luminescence of GaAs quantum wells
4. Tunneling dynamics of photogenerated carriers in semiconduc- tor superlattices
5. Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark Effect
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Terahertz optical mixing in biasedGaAssingle quantum wells;Physical Review B;2004-09-20
2. Interwell enhancement of the photoluminescence efficiency in GaAs/AlGaAs quantum wells;Journal of Applied Physics;1992-05-15
3. Linear and nonlinear optical properties of semiconductor quantum wells;Advances in Physics;1989-01
4. Microscopic calculation of electric field effects in GaAs/AlxGa1−xAs/GaAs tunnel structures;Physical Review B;1988-12-15
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