Low-temperature photoemission measurements of valence-band discontinuities at buried heterojunctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.1872/fulltext
Reference12 articles.
1. Disruption, atom distributions, and energy levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) heterojunctions
2. Photoemission-Based Photovoltage Probe of Semiconductor Surface and Interface Electronic Structure
3. Surface space-charge dynamics and surface recombination on silicon (111) surfaces measured with combined laser and synchrotron radiation
4. HgTe–CdTe superlattices grown on lattice-mismatched GaAs substrates
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