PHOTOEMISSION MICROSCOPY INVESTIGATION OF BURIED p–n GaAs HOMOJUNCTIONS AND Al/n-GaAs SCHOTTKY BARRIERS

Abstract

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p–n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.