Time dependence of photovoltaic shifts in photoelectron spectroscopy of semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.12102/fulltext
Reference11 articles.
1. Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation
2. Photovoltaic effects in photoemission studies of Schottky barrier formation
3. Dopant concentration dependences and symmetric Fermi-level movement formetal/n-type andp-type GaAs(110) interfaces formed at 60 K
4. Reversible temperature-dependent Fermi-level movement for metal-GaAs(110) interfaces
5. Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation
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