Microscopic identification of the compensation mechanisms in Si-doped GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.10288/fulltext
Reference24 articles.
1. Can electrical deactivation of highly Si‐doped GaAs be explained by autocompensation?
2. Identifying and quantifying point defects in semiconductors using x-ray-absorption spectroscopy: Si-doped GaAs
3. Studies on Group III-V Intermetallic Compounds
4. Structure of planar aggregates of si in heavily si-doped gaas
5. Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy
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