Atomic structure and stability of AlN(0001) and (000̱1) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.13878/fulltext
Reference23 articles.
1. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
2. Ab initiostudies of GaN epitaxial growth on SiC
3. Atomic arrangement at the AlN/SiC interface
4. GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
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