Transport properties ofn-type metalorganic chemical-vapor-depositedAlxGa1−xAs (0≤x≤0.6)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.6623/fulltext
Reference35 articles.
1. Conduction Band Minima in AlAs and AlSb
2. Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps
3. The fundamental absorption edge of AlAs and AlP
4. Non-shallow levels and the conduction band structure of Ga1−xAlxAs
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3. A search for resonant states from deep levels in GaAs and AlGaAs: Evidence from hall effect studies under pressure;physica status solidi (b);1996-06-01
4. Intervalley Coupling;Springer Series in Solid-State Sciences;1996
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