Non-shallow levels and the conduction band structure of Ga1−xAlxAs-Reference-Cited by-同舟云学术

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Non-shallow levels and the conduction band structure of Ga1−xAlxAs

Published:1979-12-01 Issue:2 Volume:96 Page:K77-K82
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Saxena A. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. GaAs lower conduction-band minima: Ordering and properties

2. Ph.D. Thesis, Sheffield University, 1978.

3. Electrical Properties of the GaAsX1CMinima at Low Electric Fields from a High-Pressure Experiment

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1. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2014-07

2. Chapter 6 DX and Related Defects in Semiconductors;Imperfections in III/V Materials;1993

3. Donor states in GaAs under hydrostatic pressure;Physical Review B;1990-12-15

4. Effect of alloy disorder on the vibrational spectrum of silicon donors inAlxGa1−xAs;Physical Review B;1989-11-15

5. The relationship of the D-X centre in AlxGa1-xAs and other III-V alloys with the conduction band structure;Semiconductor Science and Technology;1988-12-01

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