Investigation of two-dimensional hole gases in Si/SiGe heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.12312/fulltext
Reference16 articles.
1. Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration
2. Physics and applications of GexSi1-x/Si strained-layer heterostructures
3. Effect of interface quality on the electrical properties ofp‐Si/SiGe two‐dimensional hole gas systems
4. Two‐dimensional hole gas in Si/Si0.85Ge0.15/Si modulation‐doped double heterostructures
5. High hole mobility in Si/Si1−xGex/Sip‐type modulation‐doped double heterostructures
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1. Band-offset determination and excitons in SiGe/Si(001) quantum wells;Physical Review B;2000-08
2. Top-gating of p-Si/SiGe/Si inverted modulation-doped structures;Applied Physics Letters;2000-01-17
3. Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures;Applied Physics Letters;1999-01-25
4. Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface;Acta Physica Polonica A;1998-09
5. A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p–Si/Si1−Ge /p–Si selectively doped double heterojunctions structures;Superlattices and Microstructures;1997-10
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