Top-gating of p-Si/SiGe/Si inverted modulation-doped structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125750
Reference11 articles.
1. Metal-insulator transition atB=0inp-type SiGe
2. Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices
3. SiGe-channel heterojunction p-MOSFET's
4. On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures
5. Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures
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1. Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer;Vacuum;2014-03
2. Low-temperature electrical characterization of the Ti–Si(100) interface at the p-Si/SiGe/Si–Ti structure using Hall measurement analysis;Physica Scripta;2013-07-03
3. Electrical characterization of Si(100) surface at p-Si/SiGe/Si structure using low temperature Hall measurement analysis;Vacuum;2013-07
4. Interfacial Al segregation limiting electron mobility at the inverted interface of AlGaAs/GaAs quantum well;Semiconductor Science and Technology;2012-08-06
5. Single-hole transistor in a p-Si/SiGe quantum well;Applied Physics Letters;2001-01-15
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