Photoemission study of Si-rich4H−SiCsurfaces and initialSiO2∕SiCinterface formation
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.195335/fulltext
Reference43 articles.
1. A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) face
2. SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation
3. Indentification of the 6H-SiC(0001) 3×3 surface reconstruction core-level shifted components
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