1. Wide-gap semiconductors for high-power electronics.;Lebedev;Semiconductors,1999
2. Ultrathin SiO2-films on 4H-SiC(0001) studied by angle-scanned photoelectron diffraction.;Schürmann;Electron Spectroscopy and Related Phenomena,2007
3. Photoemission study of Si-rich 4H-SiC surfaces and initial SiO2/SiC interface formation.;Virojanadara;Phys Rev B,2005
4. 4. L'oxydation des métaux, Tome I, Processus fondamentaux [Texte imprimé]. Sous la direction de Jacques Bénard,...; avec la collaboration de Jean Bardolle, Florent Bouillon, Michel Cagnet... [et al.]. Paris: Gauthier-Villars et cie, DL 1962 [Okisleniye metallov, red. Benar Zh. T. 1: Teoreticheskiye osnovy, per.: Masterovaya M.G., Tsypin M.I.; red. Viktorovich G.S. Moscow: Metallurgiya, 1968 (in Russian)].
5. Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC.;Mynbaeva;Semiconductors,2003