Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.085305/fulltext
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1. Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors
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5. 1-nm Spatial Resolution in Carrier Profiling of Ultrashallow Junctions by Scanning Spreading Resistance Microscopy
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