Misorientation dependence of epitaxial growth on vicinal GaAs(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.6825/fulltext
Reference22 articles.
1. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
2. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
3. Optical characterization of interface disorder in multi-quantum well structures
4. Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures
5. Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy
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