MOLEKULYaRNO-LUChEVAYa EPITAKSIYa TVERDOGO RASTVORA GaPxAs1−x NA VITsINAL'NOY POVERKhNOSTI (001): KINETIChESKAYa MODEL' FORMIROVANIYa SOSTAVA V ANIONNOY PODREShETKE-Reference-Cited by-同舟云学术

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MOLEKULYaRNO-LUChEVAYa EPITAKSIYa TVERDOGO RASTVORA GaPxAs1−x NA VITsINAL'NOY POVERKhNOSTI (001): KINETIChESKAYa MODEL' FORMIROVANIYa SOSTAVA V ANIONNOY PODREShETKE

Published:2024-01-15 Issue:1 Volume:165 Page:51-64
ISSN:0044-4510
Container-title:Журнал экспериментальной и теоретической физики
language:
Short-container-title:Žurnal èksperimentalʹnoj i teoretičeskoj fiziki

Author:

Putyato M. A¹,Emel'yanov E. A¹,Petrushkov M. O¹,Vasev A. V¹,Cemyagin B. R¹,Preobrazhenskiy V. V¹

Affiliation:

1. Институт физики полупроводников им. А. В. Ржанова Сибирского отделения Российской академии наук

Publisher

The Russian Academy of Sciences

Reference27 articles.

1. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates

2. Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy

3. Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок

4. MBE Growth of GaAs1-xSbxand InyGa1-yAs and Application of BCF Theory to Study the Alloy Composition

5. Surface Stoichiometry and Structure of GaAs and GaP

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