Photoluminescence from strained InAs monolayers in GaAs under pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.1575/fulltext
Reference33 articles.
1. Theoretical approach to δ doping of GaAs with In
2. Absorption and photoluminescence of ultrathin pseudomorphic InAs/GaAs quantum wells
3. Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy
4. Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells
5. Lattice relaxation of InAs heteroepitaxy on GaAs
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2. Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure;Journal of Applied Physics;2014-07-14
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