Determination of valence-band discontinuity via optical transitions in ultrathin quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.7259/fulltext
Reference30 articles.
1. Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers
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3. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
4. Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements
5. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
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1. Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs;Journal of Applied Physics;1992-05-15
2. Hot carrier dynamics in GaAs epilayer structures grown on Si;Semiconductor Science and Technology;1992-03-01
3. Effect of valence-subband structure on the energy relaxation dynamics of electrons in GaAs quantum wells grown on Si;Physical Review B;1991-08-15
4. Valence Band Offsets of the InxGa1-xAs/GaAs Strained-Layer Superlattice;Japanese Journal of Applied Physics;1990-04-20
5. Concentration-dependent band offset inInxGa1−xAsGaAsstrained quantum wells;Physical Review B;1988-11-15
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