Valence Band Offsets of the InxGa1-xAs/GaAs Strained-Layer Superlattice
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Average bond energy model for determining valence‐band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1−x;Journal of Applied Physics;1996-07-15
2. Valence-band offset at InxGa1−xAs/GaAs heterojunctions under different strain conditions;Solid State Communications;1995-07
3. Influence of metal/n‐InAs/interlayer/n‐GaAs structure on nonalloyed ohmic contact resistance;Journal of Applied Physics;1994-11
4. Band offset determination in parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
5. Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs;Journal of Applied Physics;1992-05-15
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