Average bond energy model for determining valence‐band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1−x-Reference-Cited by-同舟云学术

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Average bond energy model for determining valence‐band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1−x

Published:1996-07-15 Issue:2 Volume:80 Page:872-879
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Ke San‐huang¹,Wang Ren‐zhi²,Huang Mei‐chun²

Affiliation:

1. CCAST (World laboratory), P.O. Box 8730, Beijing 100080, People's Republic of China Applied Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China

2. CCAST (World laboratory), P.O. Box 8730, Beijing 100080, People's Republic of China Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference42 articles.

1. N. E. Christensen, Phys. Rev. B 37, 4528 (1988).PRBMDO0163-1829

2. M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1988).PRBMDO0163-1829

3. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 35, 8154 (1987); PRBMDO0163-1829

4. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).PRBMDO0163-1829

5. C. Tejedor and F. Flores, J. Phys. C 11, L19 (1978).JPSOAW0022-3719

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