Electronic structure and magnetic properties of transition-metal-doped3Cand4Hsilicon carbide
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.235218/fulltext
Reference65 articles.
1. Point defects in silicon carbide
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3. EPR and ENDOR of Defects in Silicon Carbide
4. Electrical properties of the titanium acceptor in silicon carbide
5. Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques
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