Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.7394/fulltext
Reference26 articles.
1. Observation of a two‐dimensional hole gas in boron‐doped Si0.5Ge0.5/Ge heterostructures
2. Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGexHeterostructure
3. Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system
4. Measurement of the valence‐band offset in strained Si/Ge (100) heterojunctions by x‐ray photoelectron spectroscopy
5. Photoreflectance in Ge/Ge0.7Si0.3strained-layer superlattices
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