Theory of bonding, strain, and segregation in germanium-carbon alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.10837/fulltext
Reference39 articles.
1. Simulations of Carbon Containing Semiconductor Alloys: Bonding, Strain Compensation, and Surface Structure
2. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si
3. Enhanced Solubility of Impurities and Enhanced Diffusion near Crystal Surfaces
4. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
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