Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment-Reference-Cited by-同舟云学术

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Published:2018-09-17 Issue:9 Volume:2 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Albani Marco,Ghisalberti Lea,Bergamaschini Roberto,Friedl Martin,Salvalaglio Marco,Voigt Axel,Montalenti Francesco,Tütüncüoglu Gözde,Fontcuberta i Morral Anna,Miglio Leo

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Horizon 2020 Framework Programme

Alexander von Humboldt-Stiftung

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.2.093404/fulltext

Reference33 articles.

1. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate

2. Selective-area growth of III-V nanowires and their applications

3. Evolution of GaAs nanowire geometry in selective area epitaxy

4. Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures

5. Effects of Surface Passivation on Twin-Free GaAs Nanosheets

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