Effects of Surface Passivation on Twin-Free GaAs Nanosheets-Reference-Cited by-同舟云学术

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Effects of Surface Passivation on Twin-Free GaAs Nanosheets

Published:2015-01-21 Issue:2 Volume:9 Page:1336-1340
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Arab Shermin,Chi Chun-Yung,Shi Teng¹,Wang Yuda¹,Dapkus Daniel P.,Jackson Howard E.¹,Smith Leigh M.¹,Cronin Stephen B.

Affiliation:

1. Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221, United States

Funder

National Science Foundation

Division of Materials Research

Division of Electrical, Communications and Cyber Systems

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn505227q

Reference22 articles.

1. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

2. High‐efficiency Ga1−xAlxAs–GaAs solar cells

3. Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers

4. Optically pumped room-temperature GaAs nanowire lasers

5. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

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1. Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions;Applied Physics Reviews;2021-06

2. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

3. Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation;ACS Applied Materials & Interfaces;2020-05-29

4. Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study;Crystals;2020-01-22

5. Shape Engineering of InP Nanostructures by Selective Area Epitaxy;ACS Nano;2019-06-10

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