Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching-Reference-Cited by-同舟云学术

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Three-dimensional SiGe/Si heterostructures: Switching the dislocation sign by substrate under-etching

Published:2017-12-22 Issue:7 Volume:1 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Rovaris Fabrizio,Isa Fabio,Gatti Riccardo,Jung Arik,Isella Giovanni,Montalenti Francesco,von Känel Hans

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.1.073602/fulltext

Reference36 articles.

1. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

2. Look out III–V

3. Mid-infrared photonics in silicon and germanium

4. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

5. Ultraviolet and violet GaN light emitting diodes on silicon

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