Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical, and optical properties-Reference-Cited by-同舟云学术

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Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical, and optical properties

Published:2019-04-26 Issue:4 Volume:3 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Wang Mao,Hübner R.,Xu Chi,Xie Yufang,Berencén Y.,Heller R.,Rebohle L.,Helm M.,Prucnal S.,Zhou Shengqiang

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.3.044606/fulltext

Reference45 articles.

1. Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group‐III and group‐V dopants in silicon

2. Laser Annealing of Ion-Implanted Semiconductors

3. Effects of pulsed ruby‐laser annealing on As and Sb implanted silicon

4. Electrical Properties of Heavily Doped Silicon

5. Electrical conductivity of metallic Si:B near the metal-insulator transition

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving ultralow contact resistivity in Si via Te hyperdoping and millisecond post-metallization annealing;Acta Materialia;2024-10

2. Enhanced near-infrared absorption in Au-hyperdoped Si: interplay between mid-gap states and plasmon resonance;Optics Express;2024-08-29

3. Defect engineering for improved thermal stability of sulfur hyperdoped silicon;Materials Science in Semiconductor Processing;2024-06

4. Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide;physica status solidi (a);2024-04-26

5. Tunable magneto-transport properties in ultra-high Bi-doped Si prepared by liquid phase epitaxy;Applied Surface Science;2024-04

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