Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

Published:2016-09-27 Issue:3 Volume:6 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Fernández-Garrido Sergio,Lähnemann Jonas,Hauswald Christian,Korytov Maxim,Albrecht Martin,Chèze Caroline,Skierbiszewski Czesław,Brandt Oliver

Funder

Seventh Framework Programme

Narodowe Centrum Bada? i Rozwoju

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.6.034017/fulltext

Reference60 articles.

1. Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy

2. Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy

3. Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

4. Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

5. N-polar GaN epitaxy and high electron mobility transistors

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters;AIP Advances;2024-02-01

2. Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy;APL Materials;2023-08-01

3. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

4. III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop;Applied Physics Letters;2022-07-11

5. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15

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