Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy
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Published:2002
Issue:3
Volume:20
Page:1217
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Ng H. M.,Cho A. Y.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
28 articles.
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