Carrier Diffusion in GaN : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations
Author:
Funder
Russian Science Foundation
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.17.024019/fulltext
Reference62 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
4. Microstructural origins of localization in InGaN quantum wells
5. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
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