Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3-Reference-Cited by-同舟云学术

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

Published:2019-11-06 Issue:4 Volume:9 Page:
ISSN:2160-3308
Container-title:Physical Review X
language:en
Short-container-title:Phys. Rev. X

Author:

Johnson Jared M.,Chen Zhen,Varley Joel B.,Jackson Christine M.,Farzana Esmat,Zhang Zeng,Arehart Aaron R.,Huang Hsien-Lien,Genc Arda,Ringel Steven A.,Van de Walle Chris G.,Muller David A.,Hwang Jinwoo

Funder

U.S. Department of Defense

Air Force Office of Scientific Research

National Science Foundation

Defense Threat Reduction Agency

U.S. Department of Energy

Lawrence Livermore National Laboratory

Office of Energy Efficiency and Renewable Energy

Advanced Manufacturing Office

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevX.9.041027/fulltext

Reference51 articles.

1. Luminescence properties of defects in GaN

2. Czochralski growth and characterization of β-Ga2O3 single crystals

3. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

4. Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

5. Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

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