Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO4 , Halide Perovskites, and Amorphous and Crystalline Silicon
Author:
Funder
Initiative and Networking Fund of the Helmholtz Association
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PRXEnergy.1.023008/fulltext
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