Theory of the Ettingshausen Effect in Semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.120.437/fulltext
Reference6 articles.
1. Nernst and Ettingshausen Effects in Germanium between 300 and 750°K
2. Nernst and Ettingshausen Effects in Silicon between 300°K and 800°K
3. Die Anomalie der galvano- und thermomagnetischen Transversaleffekte
4. Thermoelectric and Galvanomagnetic effects in Lead Selenide and Telluride
5. Theory of Transport Effects in Semiconductors: The Nernst Coefficient, and Its Relation to Thermoelectric Power
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