Nernst and Ettingshausen Effects in Silicon between 300°K and 800°K
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.117.1491/fulltext
Reference5 articles.
1. Nernst and Ettingshausen Effects in Germanium between 300 and 750°K
2. Electrical Properties of Silicon Containing Arsenic and Boron
3. Drift and Conductivity Mobility in Silicon
4. Hall Mobility of Electrons and Holes in Silicon
5. The thermal conductivity of germanium and silicon between 2 an d 300° K
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