Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices-Reference-Cited by-同舟云学术

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

Published:2020-07-13 Issue:1 Volume:14 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Chokawa Kenta^ORCID,Narita Tetsuo^ORCID,Kikuta Daigo^ORCID,Shiozaki Koji,Kachi Tetsu,Oshiyama Atsushi,Shiraishi Kenji

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.014034/fulltext

Reference82 articles.

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3. SiC and GaN devices – wide bandgap is not all the same

4. Reliability considerations for recent Infineon SiC diode releases

5. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

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