Giant Tunneling Electroresistance Induced by Interfacial Doping in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Pt</mml:mi><mml:mo>/</mml:mo><mml:mrow><mml:mi>Ba</mml:mi><mml:mi>Ti</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:mrow><mml:mo>/</mml:mo><mml:mi>Pt</mml:mi></mml:mrow></mml:math> Ferroelectric Tunnel Junctions-Reference-Cited by-同舟云学术

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Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions

Published:2022-04-01 Issue:4 Volume:17 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Xiao Wei^ORCID,Kang Lili,Hao Hua,Zhou Yanhong,Zheng Xiaohong,Zhang Lei^ORCID,Zeng Zhi

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

CASHIPS

Chinese Academy of Sciences

Shanxi Province

Center for Computational Science

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.17.044001/fulltext

Reference67 articles.

1. Tunneling Across a Ferroelectric

2. Giant Electroresistance in Ferroelectric Tunnel Junctions

3. Theoretical current-voltage characteristics of ferroelectric tunnel junctions

4. Solid-state memories based on ferroelectric tunnel junctions

5. Ferroelectric Tunnel Memristor

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1. High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP₂Se₆/Ga₂O₃ van der Waals Heterostructure;IEEE Transactions on Electron Devices;2024-08

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3. Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions;Surfaces and Interfaces;2024-03

4. Van der Waals Heterostructures for Photoelectric, Memory, and Neural Network Applications;Small Science;2024-02-14

5. High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures;Physical Chemistry Chemical Physics;2024

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