Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices-Reference-Cited by-同舟云学术

Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices

Published:2021-02-19 Issue:2 Volume:15 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Żak M.^ORCID,Muziol G.^ORCID,Turski H.^ORCID,Siekacz M.^ORCID,Nowakowski-Szkudlarek K.^ORCID,Feduniewicz-Żmuda A.^ORCID,Chlipała M.^ORCID,Lachowski A.^ORCID,Skierbiszewski C.^ORCID

Funder

Polish National Centre for Research and Development

TEAM-TECH

HOMING

National Science Center Poland

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.024046/fulltext

Reference54 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

3. InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

4. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

5. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

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