Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content
Author:
Funder
National Science Foundation
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=12/a=121003/pdf
Reference31 articles.
1. A dual-wavelength indium gallium nitride quantum well light emitting diode
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