Electronic and Atomic Structure of GaAs Epitaxial Overlays on Si(111)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.61.2957/fulltext
Reference12 articles.
1. Formation of the interface between GaAs and Si: Implications for GaAs‐on‐Si heteroepitaxy
2. Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As
3. Location of atoms in the first monolayer of GaAs on Si
4. Atomic structure of one monolayer of GaAs on Si(111)
5. Initial stages of epitaxial growth: Gallium arsenide on silicon
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1. Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111);Physical Review Materials;2018-12-03
2. Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth;Applied Physics Letters;2015-06-08
3. Energetics of island formation of AlAs, GaAs, and InAs on Si(100);Journal of the Korean Physical Society;2012-03
4. Atomic Structures of a Monolayer of AlAs, GaAs, and InAs on Si(111);Journal of the Korean Physical Society;2010-08-13
5. Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination;New Journal of Physics;2005-04-29
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