Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.93.206102/fulltext
Reference18 articles.
1. Hole conductivity and compensation in epitaxial GaN:Mg layers
2. New Scenario for High-TcCuprates: Electronic Topological Transition as a Motor for Anomalies in the Underdoped Regime
3. Ordering in bulk GaN:Mg samples: defects caused by Mg doping
4. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
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