Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene-Reference-Cited by-同舟云学术

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Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

Published:2013-01-18 Issue:3 Volume:110 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Kim Keun Su,Kim Tae-Hwan,Walter Andrew L.,Seyller Thomas,Yeom Han Woong,Rotenberg Eli,Bostwick Aaron

Funder

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.110.036804/fulltext

Reference34 articles.

1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

2. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

3. New Phenomenon in Narrow Germaniump−nJunctions

4. Resonant tunneling in semiconductor double barriers

5. Common-path interference and oscillatory Zener tunneling in bilayer graphene p-n junctions

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1. Atomic-scale tailoring of chemisorbed atomic oxygen on epitaxial graphene for graphene-based electronic devices;Applied Physics Letters;2023-07-10

2. Emergence of metallic surface states and negative differential conductance in thin β-FeSi₂ films on Si(001);Journal of Physics: Condensed Matter;2023-02-10

3. Origami-controlled strain engineering of tunable flat bands and correlated states in folded graphene;Physical Review Materials;2022-04-21

4. Electric-Field-Driven Negative Differential Conductance in 2D van der Waals Ferromagnet Fe3GeTe2;Nano Letters;2021-10-28

5. Atomic‐Scale Characterization of Negative Differential Resistance in Ferroelectric Bi 2 WO 6;Advanced Functional Materials;2021-10-07

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