Tailoring the Ultrathin Al-Induced Crystallization Temperature of Amorphous Si by Application of Interface Thermodynamics
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.100.125503/fulltext
Reference26 articles.
1. Crystallization of silicon in aluminium/amorphous-silicon multilayers
2. Metal-contact-induced crystallization of semiconductors
3. Nanoscale Observation of a Grain Boundary Related Growth Mode in Thin Film Reactions
4. Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon
5. Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
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