Initial Oxidation of Si(100)-(2×1)as an Autocatalytic Reaction
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.82.2334/fulltext
Reference14 articles.
1. Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2
2. Two-Dimensional Growth and Decomposition of Initial ThermalSiO2Layer on Si(100)
3. Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy
4. Growth Mode and Characteristics of the O2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
5. Mechanism of submonolayer oxide formation on silicon surfaces upon thermal oxidation
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