Integer Quantum Hall Effect on a Six-Valley Hydrogen-Passivated Silicon (111) Surface-Reference-Cited by-同舟云学术

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Integer Quantum Hall Effect on a Six-Valley Hydrogen-Passivated Silicon (111) Surface

Published:2007-07-05 Issue:1 Volume:99 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Eng K.,McFarland R. N.,Kane B. E.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.99.016801/fulltext

Reference24 articles.

1. High-mobility Si and Ge structures

2. Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112)

3. High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

4. Ideal hydrogen termination of the Si (111) surface

5. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

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