High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2001734
Reference12 articles.
1. The passivation of electrically active sites on the surface of crystalline silicon by fluorination
2. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
3. Ideal hydrogen termination of the Si (111) surface
4. Al Nucleation on Monohydride and Bare Si(001) Surfaces: Atomic Scale Patterning
5. Towards the fabrication of phosphorus qubits for a silicon quantum computer
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